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VBE Technology Shenzhen Co., Ltd.

VBE TECHNOLOGY SHENZHEN CO., LTD Leading Intelligent RF Security Solutions Provider

Manufacturer from China
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8 Years
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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

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Cell Phone Signal Jammer

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Wifi Signal Jammer

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Handheld Signal Jammer

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Convoy Bomb Jammers

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Prison Cell Phone Jammers

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High Power Signal Jammer

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Portable Signal Jammer

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GPS Signal Jammer

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Anti Drone Jammers

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Drone Detectors

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Mobile Phone Interception

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RF Power Amplifier Module

 [25]

Cell Phone Signal Repeater

 [11]

Mobile Signal Booster

 [12]

RF Signal Detector

 [5]

RF Power Transistor

 [10]

RF Passive Components

 [6]

RF Antennas

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VBE Technology Shenzhen Co., Ltd.
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City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MrCharms Zhao
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China DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors wholesale
  • China DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors wholesale

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
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Brand Name :VBE
Model Number :VBE6006H
Certification :ISO
Place of Origin :CHINA
MOQ :1pcs
Supply Ability :10K
Delivery Time :5-8 working days
Packaging Details :Neutral Packing
Condition :Brand New and Original
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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

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rf power mosfet transistors

rf mosfet power transistor

power rf mosfet
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